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PSMN0R9-30YLDX

PSMN0R9-30YLDX Nexperia USA Inc.


PSMN0R9-30YLD.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 300A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V
Power Dissipation (Max): 291W
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 15 V
auf Bestellung 19500 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1500+2.91 EUR
3000+ 2.76 EUR
7500+ 2.66 EUR
Mindestbestellmenge: 1500
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Technische Details PSMN0R9-30YLDX Nexperia USA Inc.

Description: MOSFET N-CH 30V 300A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300A (Tc), Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V, Power Dissipation (Max): 291W, Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: LFPAK56; Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 15 V.

Weitere Produktangebote PSMN0R9-30YLDX nach Preis ab 2.38 EUR bis 6.14 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
PSMN0R9-30YLDX PSMN0R9-30YLDX Hersteller : NEXPERIA PSMN0R9-30YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 284A; Idm: 1.8kA; 291W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 284A
Pulsed drain current: 1.8kA
Power dissipation: 291W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 1.44mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1448 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+3.76 EUR
22+ 3.4 EUR
28+ 2.57 EUR
30+ 2.43 EUR
Mindestbestellmenge: 20
PSMN0R9-30YLDX PSMN0R9-30YLDX Hersteller : NEXPERIA PSMN0R9-30YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 284A; Idm: 1.8kA; 291W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 284A
Pulsed drain current: 1.8kA
Power dissipation: 291W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 1.44mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
auf Bestellung 1448 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
20+3.76 EUR
22+ 3.4 EUR
28+ 2.57 EUR
30+ 2.43 EUR
Mindestbestellmenge: 20
PSMN0R9-30YLDX PSMN0R9-30YLDX Hersteller : Nexperia PSMN0R9_30YLD-2938879.pdf MOSFET PSMN0R9-30YLD/SOT1023/4 LEADS
auf Bestellung 6876 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
10+5.3 EUR
12+ 4.39 EUR
100+ 3.51 EUR
250+ 3.22 EUR
500+ 2.94 EUR
1000+ 2.49 EUR
1500+ 2.38 EUR
Mindestbestellmenge: 10
PSMN0R9-30YLDX PSMN0R9-30YLDX Hersteller : Nexperia USA Inc. PSMN0R9-30YLD.pdf Description: MOSFET N-CH 30V 300A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V
Power Dissipation (Max): 291W
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 15 V
auf Bestellung 20083 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.14 EUR
10+ 5.09 EUR
100+ 4.05 EUR
500+ 3.43 EUR
Mindestbestellmenge: 5
PSMN0R9-30YLDX PSMN0R9-30YLDX Hersteller : NEXPERIA 804048637914140psmn0r9-30yld.pdf Trans MOSFET N-CH 30V 300A 5-Pin(4+Tab) LFPAK T/R
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