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PSMN1R0-25YLDX

PSMN1R0-25YLDX Nexperia USA Inc.

PSMN1R0-25YLD.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.89mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 71.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5308 pF @ 12 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1500+2.12 EUR
3000+ 2.01 EUR
Mindestbestellmenge: 1500
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Technische Details PSMN1R0-25YLDX Nexperia USA Inc.

Description: MOSFET N-CH 25V 100A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 0.89mOhm @ 25A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 160W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 71.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5308 pF @ 12 V.

Weitere Produktangebote PSMN1R0-25YLDX nach Preis ab 1.73 EUR bis 4.47 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
PSMN1R0-25YLDX PSMN1R0-25YLDX Hersteller : Nexperia PSMN1R0_25YLD-2938902.pdf MOSFET PSMN1R0-25YLD/SOT669/LFPAK
auf Bestellung 8204 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
15+3.64 EUR
17+ 3.12 EUR
100+ 2.4 EUR
250+ 2.22 EUR
500+ 2.01 EUR
1000+ 1.78 EUR
1500+ 1.73 EUR
Mindestbestellmenge: 15
PSMN1R0-25YLDX PSMN1R0-25YLDX Hersteller : Nexperia USA Inc. PSMN1R0-25YLD.pdf Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.89mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 71.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5308 pF @ 12 V
auf Bestellung 5901 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.47 EUR
10+ 3.71 EUR
100+ 2.95 EUR
500+ 2.5 EUR
Mindestbestellmenge: 6
PSMN1R0-25YLDX Hersteller : NEXPERIA PSMN1R0-25YLD.pdf PSMN1R0-25YLDX SMD N channel transistors
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PSMN1R0-25YLDX PSMN1R0-25YLDX Hersteller : NEXPERIA 269203506190328psmn1r0-25yld.pdf Trans MOSFET N-CH 25V 100A Automotive 5-Pin(4+Tab) LFPAK T/R
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