PSMN1R1-40BS,118 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 20 V
Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 20 V
auf Bestellung 3200 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
800+ | 4.75 EUR |
1600+ | 4.07 EUR |
2400+ | 3.83 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMN1R1-40BS,118 Nexperia USA Inc.
Description: NEXPERIA - PSMN1R1-40BS,118 - Leistungs-MOSFET, n-Kanal, 40 V, 120 A, 0.00116 ohm, TO-263 (D2PAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 40V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 120A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3V, euEccn: NLR, Verlustleistung: 306W, Bauform - Transistor: TO-263 (D2PAK), Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.00116ohm, SVHC: Lead (14-Jun-2023).
Weitere Produktangebote PSMN1R1-40BS,118 nach Preis ab 3.74 EUR bis 7.88 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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PSMN1R1-40BS,118 | Hersteller : Nexperia | MOSFET PSMN1R1-40BS/SOT404/D2PAK |
auf Bestellung 5057 Stücke: Lieferzeit 14-28 Tag (e) |
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PSMN1R1-40BS,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 20 V |
auf Bestellung 3918 Stücke: Lieferzeit 21-28 Tag (e) |
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PSMN1R1-40BS,118 | Hersteller : NEXPERIA |
Description: NEXPERIA - PSMN1R1-40BS,118 - Leistungs-MOSFET, n-Kanal, 40 V, 120 A, 0.00116 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 306W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00116ohm SVHC: Lead (14-Jun-2023) |
auf Bestellung 9292 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN1R1-40BS,118 | Hersteller : NEXPERIA |
Description: NEXPERIA - PSMN1R1-40BS,118 - Leistungs-MOSFET, n-Kanal, 40 V, 120 A, 0.00116 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: Y-EX Verlustleistung: 306W Kanaltyp: n-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.00116ohm rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 SVHC: Lead (17-Jan-2023) |
auf Bestellung 9312 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN1R1-40BS,118 | Hersteller : NEXPERIA | Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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PSMN1R1-40BS,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 1320A; 306W Type of transistor: N-MOSFET Kind of package: reel; tape Case: D2PAK; SOT404 On-state resistance: 2.3mΩ Gate-source voltage: ±20V Mounting: SMD Pulsed drain current: 1320A Power dissipation: 306W Gate charge: 136nC Polarisation: unipolar Drain current: 120A Kind of channel: enhanced Drain-source voltage: 40V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PSMN1R1-40BS,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 1320A; 306W Type of transistor: N-MOSFET Kind of package: reel; tape Case: D2PAK; SOT404 On-state resistance: 2.3mΩ Gate-source voltage: ±20V Mounting: SMD Pulsed drain current: 1320A Power dissipation: 306W Gate charge: 136nC Polarisation: unipolar Drain current: 120A Kind of channel: enhanced Drain-source voltage: 40V |
Produkt ist nicht verfügbar |