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PSMN1R2-25YL,115

PSMN1R2-25YL,115 Nexperia USA Inc.

PSMN1R2-25YL.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 12 V
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1500+2.94 EUR
3000+ 2.79 EUR
7500+ 2.69 EUR
Mindestbestellmenge: 1500
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Technische Details PSMN1R2-25YL,115 Nexperia USA Inc.

Description: MOSFET N-CH 25V 100A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V, Power Dissipation (Max): 121W (Tc), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Supplier Device Package: LFPAK56; Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 12 V.

Weitere Produktangebote PSMN1R2-25YL,115 nach Preis ab 2.15 EUR bis 6.19 EUR

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Preis ohne MwSt
PSMN1R2-25YL,115 PSMN1R2-25YL,115 Hersteller : Nexperia PSMN1R2_25YL-2939049.pdf MOSFET PSMN1R2-25YL/SOT1023/4 LEADS
auf Bestellung 24840 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
15+3.51 EUR
17+ 3.17 EUR
100+ 2.78 EUR
250+ 2.56 EUR
500+ 2.54 EUR
1500+ 2.16 EUR
3000+ 2.15 EUR
Mindestbestellmenge: 15
PSMN1R2-25YL,115 PSMN1R2-25YL,115 Hersteller : Nexperia USA Inc. PSMN1R2-25YL.pdf Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 12 V
auf Bestellung 16330 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.19 EUR
10+ 5.14 EUR
100+ 4.09 EUR
500+ 3.46 EUR
Mindestbestellmenge: 5
PSMN1R2-25YL,115 PSMN1R2-25YL,115
Produktcode: 83240 		PSMN1R2-25YL.pdf Transistoren > MOSFET N-CH
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PSMN1R2-25YL,115 Hersteller : NEXPERIA PSMN1R2-25YL.pdf PSMN1R2-25YL.115 SMD N channel transistors
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