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PSMN1R2-55SLH

PSMN1R2-55SLH Nexperia

PSMN1R2_55SLH-2932217.pdf Hersteller: Nexperia
MOSFET N-channel 55 V, 1.03 mOhm, 330 A logic level Application Specific MOSFET in LFPAK88
auf Bestellung 1896 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
6+8.94 EUR
10+ 8.06 EUR
100+ 6.6 EUR
Mindestbestellmenge: 6
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Technische Details PSMN1R2-55SLH Nexperia

Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A, Packaging: Tape & Reel (TR), Package / Case: SOT-1235, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 330A (Ta), Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 375W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: LFPAK88 (SOT1235), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V.

Weitere Produktangebote PSMN1R2-55SLH nach Preis ab 5.02 EUR bis 9.49 EUR

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Preis ohne MwSt
PSMN1R2-55SLH PSMN1R2-55SLH Hersteller : Nexperia USA Inc. PSMN1R2-55SLH.pdf Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 375W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
auf Bestellung 1975 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9.49 EUR
10+ 8.53 EUR
100+ 6.99 EUR
500+ 5.95 EUR
1000+ 5.02 EUR
Mindestbestellmenge: 3
PSMN1R2-55SLH PSMN1R2-55SLH Hersteller : Nexperia USA Inc. PSMN1R2-55SLH.pdf Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 375W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
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