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PSMN1R2-55SLHAX

PSMN1R2-55SLHAX Nexperia


PSMN1R2_55SLH-2932217.pdf Hersteller: Nexperia
MOSFET PSMN1R2-55SLH/SOT1235/LFPAK88
auf Bestellung 11298 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
5+11.31 EUR
10+ 9.49 EUR
25+ 8.97 EUR
100+ 7.7 EUR
250+ 7.25 EUR
500+ 6.84 EUR
2000+ 5.8 EUR
Mindestbestellmenge: 5
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Technische Details PSMN1R2-55SLHAX Nexperia

Description: PSMN1R2-55SLH/SOT1235/LFPAK88, Packaging: Tape & Reel (TR), Package / Case: SOT-1235, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 330A (Ta), Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 375W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: LFPAK88 (SOT1235), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V.

Weitere Produktangebote PSMN1R2-55SLHAX nach Preis ab 7.31 EUR bis 15.03 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
PSMN1R2-55SLHAX Hersteller : Nexperia USA Inc. PSMN1R2-55SLH.pdf Description: PSMN1R2-55SLH/SOT1235/LFPAK88
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 375W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2000+7.31 EUR
Mindestbestellmenge: 2000
PSMN1R2-55SLHAX Hersteller : Nexperia USA Inc. PSMN1R2-55SLH.pdf Description: PSMN1R2-55SLH/SOT1235/LFPAK88
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 375W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+15.03 EUR
Mindestbestellmenge: 2
PSMN1R2-55SLHAX Hersteller : Nexperia USA Inc. PSMN1R2-55SLH.pdf Description: PSMN1R2-55SLH/SOT1235/LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 375W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
PSMN1R2-55SLHAX Hersteller : NEXPERIA PSMN1R2-55SLH.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 284A; Idm: 1588A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 284A
Pulsed drain current: 1588A
Power dissipation: 375W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 395nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN1R2-55SLHAX Hersteller : NEXPERIA PSMN1R2-55SLH.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 284A; Idm: 1588A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 284A
Pulsed drain current: 1588A
Power dissipation: 375W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 395nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar