auf Bestellung 11298 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5+ | 11.31 EUR |
10+ | 9.49 EUR |
25+ | 8.97 EUR |
100+ | 7.7 EUR |
250+ | 7.25 EUR |
500+ | 6.84 EUR |
2000+ | 5.8 EUR |
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Technische Details PSMN1R2-55SLHAX Nexperia
Description: PSMN1R2-55SLH/SOT1235/LFPAK88, Packaging: Tape & Reel (TR), Package / Case: SOT-1235, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 330A (Ta), Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 375W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: LFPAK88 (SOT1235), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V.
Weitere Produktangebote PSMN1R2-55SLHAX nach Preis ab 7.31 EUR bis 15.03 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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PSMN1R2-55SLHAX | Hersteller : Nexperia USA Inc. |
Description: PSMN1R2-55SLH/SOT1235/LFPAK88 Packaging: Tape & Reel (TR) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330A (Ta) Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 375W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V |
auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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PSMN1R2-55SLHAX | Hersteller : Nexperia USA Inc. |
Description: PSMN1R2-55SLH/SOT1235/LFPAK88 Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330A (Ta) Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 375W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V |
auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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PSMN1R2-55SLHAX | Hersteller : Nexperia USA Inc. |
Description: PSMN1R2-55SLH/SOT1235/LFPAK88 Packaging: Cut Tape (CT) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330A (Ta) Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 375W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V |
auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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PSMN1R2-55SLHAX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 284A; Idm: 1588A; 375W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 284A Pulsed drain current: 1588A Power dissipation: 375W Case: LFPAK88; SOT1235 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 395nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PSMN1R2-55SLHAX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 284A; Idm: 1588A; 375W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 284A Pulsed drain current: 1588A Power dissipation: 375W Case: LFPAK88; SOT1235 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 395nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |