auf Bestellung 140 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 12+ | 4.45 EUR |
| 13+ | 4.03 EUR |
| 100+ | 3.25 EUR |
| 500+ | 2.65 EUR |
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Technische Details PSMN1R5-25YL,115 Nexperia
Description: MOSFET N-CH 25V 100A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 15A, 10V, Power Dissipation (Max): 109W (Tc), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4830 pF @ 12 V.
Weitere Produktangebote PSMN1R5-25YL,115
| Foto | Bezeichnung | Hersteller | Beschreibung |
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auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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PSMN1R5-25YL,115 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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PSMN1R5-25YL,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 25V 100A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 15A, 10V Power Dissipation (Max): 109W (Tc) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4830 pF @ 12 V |
Produkt ist nicht verfügbar |
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PSMN1R5-25YL,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 25V 100A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 15A, 10V Power Dissipation (Max): 109W (Tc) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4830 pF @ 12 V |
Produkt ist nicht verfügbar |