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PSMN1R5-30BLEJ

PSMN1R5-30BLEJ Nexperia USA Inc.

PSMN1R5-30BLE.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Power Dissipation (Max): 401W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 228 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14934 pF @ 15 V
auf Bestellung 9600 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
800+6.38 EUR
1600+ 5.46 EUR
2400+ 5.14 EUR
Mindestbestellmenge: 800
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Technische Details PSMN1R5-30BLEJ Nexperia USA Inc.

Description: MOSFET N-CH 30V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V, Power Dissipation (Max): 401W (Tc), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 228 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14934 pF @ 15 V.

Weitere Produktangebote PSMN1R5-30BLEJ nach Preis ab 5.25 EUR bis 10.56 EUR

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Preis ohne MwSt
PSMN1R5-30BLEJ PSMN1R5-30BLEJ Hersteller : Nexperia PSMN1R5_30BLE-1479834.pdf MOSFET PSMN1R5-30BLE/SOT404/D2PAK
auf Bestellung 5333 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
5+10.45 EUR
10+ 8.74 EUR
25+ 8.53 EUR
100+ 7.07 EUR
250+ 6.76 EUR
500+ 6.37 EUR
800+ 5.25 EUR
Mindestbestellmenge: 5
PSMN1R5-30BLEJ PSMN1R5-30BLEJ Hersteller : Nexperia USA Inc. PSMN1R5-30BLE.pdf Description: MOSFET N-CH 30V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
Power Dissipation (Max): 401W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 228 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14934 pF @ 15 V
auf Bestellung 9757 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+10.56 EUR
10+ 8.87 EUR
100+ 7.18 EUR
Mindestbestellmenge: 3
PSMN1R5-30BLEJ Hersteller : NEXPERIA PSMN1R5-30BLE.pdf PSMN1R5-30BLEJ SMD N channel transistors
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