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PSMN1R5-30YL,115

PSMN1R5-30YL,115 Nexperia USA Inc.


PSMN1R5-30YL.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 15A, 10V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5057 pF @ 12 V
auf Bestellung 4500 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1500+1.67 EUR
3000+ 1.57 EUR
Mindestbestellmenge: 1500
Produktrezensionen
Produktbewertung abgeben

Technische Details PSMN1R5-30YL,115 Nexperia USA Inc.

Description: MOSFET N-CH 30V 100A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 15A, 10V, Power Dissipation (Max): 109W (Tc), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 77.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5057 pF @ 12 V.

Weitere Produktangebote PSMN1R5-30YL,115 nach Preis ab 1.56 EUR bis 3.9 EUR

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Preis ohne MwSt
PSMN1R5-30YL,115 PSMN1R5-30YL,115 Hersteller : Nexperia USA Inc. PSMN1R5-30YL.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 15A, 10V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5057 pF @ 12 V
auf Bestellung 4500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.8 EUR
10+ 3.1 EUR
100+ 2.42 EUR
500+ 2.05 EUR
Mindestbestellmenge: 7
PSMN1R5-30YL,115 PSMN1R5-30YL,115 Hersteller : Nexperia PSMN1R5_30YL-2938918.pdf MOSFET PSMN1R5-30YL/SOT669/LFPAK
auf Bestellung 2196 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
14+3.9 EUR
17+ 3.15 EUR
100+ 2.44 EUR
500+ 2.11 EUR
1000+ 2.02 EUR
1500+ 1.72 EUR
3000+ 1.56 EUR
Mindestbestellmenge: 14
PSMN1R5-30YL,115 PSMN1R5-30YL,115 Hersteller : NEXPERIA NEXP-S-A0003059639-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: NEXPERIA - PSMN1R5-30YL,115 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 0.0013 ohm, SOT-669, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 30V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.7V
euEccn: NLR
Verlustleistung: 109W
Anzahl der Pins: 4Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0013ohm
auf Bestellung 528 Stücke:
Lieferzeit 14-21 Tag (e)
PSMN1R5-30YL,115 PSMN1R5-30YL,115 Hersteller : NEXPERIA 4380869007944952psmn1r5-30yl.pdf Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R
Produkt ist nicht verfügbar
PSMN1R5-30YL,115 Hersteller : NEXPERIA PSMN1R5-30YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 790A; 109W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 790A
Power dissipation: 109W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 77.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN1R5-30YL,115 Hersteller : NEXPERIA PSMN1R5-30YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 790A; 109W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 790A
Power dissipation: 109W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 77.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar