PSMN1R5-30YLC,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 25A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4044 pF @ 15 V
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 25A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4044 pF @ 15 V
auf Bestellung 4500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1500+ | 1.64 EUR |
3000+ | 1.55 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMN1R5-30YLC,115 Nexperia USA Inc.
Description: NEXPERIA - PSMN1R5-30YLC,115 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 0.0013 ohm, LFPAK56, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 100A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Verlustleistung Pd: 179W, Gate-Source-Schwellenspannung, max.: 1.51V, euEccn: NLR, Verlustleistung: 179W, Bauform - Transistor: LFPAK56, Anzahl der Pins: 4Pin(s), Produktpalette: NextPower, productTraceability: Yes-Date/Lot Code, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.0013ohm, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.0013ohm, SVHC: No SVHC (14-Jun-2023).
Weitere Produktangebote PSMN1R5-30YLC,115 nach Preis ab 1.34 EUR bis 3.72 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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PSMN1R5-30YLC,115 | Hersteller : Nexperia | MOSFET PSMN1R5-30YLC/SOT669/LFPAK |
auf Bestellung 6615 Stücke: Lieferzeit 14-28 Tag (e) |
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PSMN1R5-30YLC,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 100A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.55mOhm @ 25A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4044 pF @ 15 V |
auf Bestellung 4921 Stücke: Lieferzeit 21-28 Tag (e) |
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PSMN1R5-30YLC,115 | Hersteller : NEXPERIA |
Description: NEXPERIA - PSMN1R5-30YLC,115 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 0.0013 ohm, LFPAK56, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 179W Gate-Source-Schwellenspannung, max.: 1.51V euEccn: NLR Verlustleistung: 179W Bauform - Transistor: LFPAK56 Anzahl der Pins: 4Pin(s) Produktpalette: NextPower productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0013ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0013ohm SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 2639 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN1R5-30YLC,115 | Hersteller : NEXPERIA | Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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PSMN1R5-30YLC,115 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 200A; Idm: 1016A; 179W Case: LFPAK56; PowerSO8; SOT669 Mounting: SMD On-state resistance: 1.65mΩ Kind of package: reel; tape Power dissipation: 179W Drain current: 200A Gate charge: 65nC Drain-source voltage: 30V Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 1016A Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PSMN1R5-30YLC,115 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 200A; Idm: 1016A; 179W Case: LFPAK56; PowerSO8; SOT669 Mounting: SMD On-state resistance: 1.65mΩ Kind of package: reel; tape Power dissipation: 179W Drain current: 200A Gate charge: 65nC Drain-source voltage: 30V Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 1016A Polarisation: unipolar |
Produkt ist nicht verfügbar |