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PSMN1R5-40PS,127

PSMN1R5-40PS,127 Nexperia USA Inc.

PSMN1R5-40PS.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 20 V
auf Bestellung 4610 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9.75 EUR
10+ 8.18 EUR
100+ 6.62 EUR
500+ 5.88 EUR
1000+ 5.04 EUR
2000+ 4.74 EUR
Mindestbestellmenge: 3
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Technische Details PSMN1R5-40PS,127 Nexperia USA Inc.

Description: MOSFET N-CH 40V 120A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V, Power Dissipation (Max): 338W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 20 V.

Weitere Produktangebote PSMN1R5-40PS,127 nach Preis ab 4.84 EUR bis 9.93 EUR

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PSMN1R5-40PS,127 PSMN1R5-40PS,127 Hersteller : Nexperia PSMN1R5_40PS-2938880.pdf MOSFET PSMN1R5-40PS/SOT78/SIL3P
auf Bestellung 4840 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
6+9.93 EUR
10+ 8.35 EUR
50+ 8.14 EUR
100+ 6.71 EUR
250+ 6.58 EUR
500+ 5.95 EUR
1000+ 4.84 EUR
Mindestbestellmenge: 6
PSMN1R5-40PS,127 Hersteller : NEXPERIA PSMN1R5-40PS.pdf PSMN1R5-40PS.127 THT N channel transistors
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