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PSMN2R0-30YL,115

PSMN2R0-30YL,115 Nexperia


4374811682569403psmn2r0-30yl.pdf Hersteller: Nexperia
Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 161 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
159+0.97 EUR
161+ 0.93 EUR
Mindestbestellmenge: 159
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Technische Details PSMN2R0-30YL,115 Nexperia

Description: MOSFET N-CH 30V 100A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V, Power Dissipation (Max): 97W (Tc), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 12 V.

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PSMN2R0-30YL,115 PSMN2R0-30YL,115 Hersteller : Nexperia 4374811682569403psmn2r0-30yl.pdf Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
153+1.01 EUR
159+ 0.94 EUR
161+ 0.9 EUR
Mindestbestellmenge: 153
PSMN2R0-30YL,115 PSMN2R0-30YL,115 Hersteller : Nexperia PSMN2R0_30YL-2938979.pdf MOSFET PSMN2R0-30YL/SOT669/LFPAK
auf Bestellung 4929 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
30+1.74 EUR
31+ 1.73 EUR
1500+ 1.52 EUR
Mindestbestellmenge: 30
PSMN2R0-30YL,115 PSMN2R0-30YL,115 Hersteller : Nexperia USA Inc. PSMN2R0-30YL.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 12 V
auf Bestellung 18000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1500+1.74 EUR
3000+ 1.64 EUR
7500+ 1.56 EUR
10500+ 1.49 EUR
Mindestbestellmenge: 1500
PSMN2R0-30YL,115 PSMN2R0-30YL,115 Hersteller : Nexperia USA Inc. PSMN2R0-30YL.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 12 V
auf Bestellung 20294 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.95 EUR
10+ 3.24 EUR
100+ 2.52 EUR
500+ 2.13 EUR
Mindestbestellmenge: 7
PSMN2R0-30YL,115 PSMN2R0-30YL,115 Hersteller : Nexperia 4374811682569403psmn2r0-30yl.pdf Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R
Produkt ist nicht verfügbar
PSMN2R0-30YL,115 PSMN2R0-30YL,115 Hersteller : NEXPERIA 4374811682569403psmn2r0-30yl.pdf Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R
Produkt ist nicht verfügbar
PSMN2R0-30YL,115 Hersteller : NEXPERIA PSMN2R0-30YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 667A; 97W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 667A
Power dissipation: 97W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN2R0-30YL,115 Hersteller : NEXPERIA PSMN2R0-30YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 667A; 97W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 667A
Power dissipation: 97W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar