PSMN2R1-40PLQ NEXPERIA
Hersteller: NEXPERIACategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 1075A; 293W
Mounting: THT
Case: SOT78; TO220AB
Kind of package: tube
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
On-state resistance: 2.2mΩ
Gate-source voltage: ±20V
Pulsed drain current: 1075A
Power dissipation: 293W
Gate charge: 168.9nC
Polarisation: unipolar
Drain current: 150A
Anzahl je Verpackung: 1 Stücke
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Technische Details PSMN2R1-40PLQ NEXPERIA
Description: MOSFET N-CH 40V 150A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V, Power Dissipation (Max): 293W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 87.8 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 9584 pF @ 25 V.
Weitere Produktangebote PSMN2R1-40PLQ
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Verfügbarkeit |
Preis ohne MwSt |
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PSMN2R1-40PLQ | Hersteller : NEXPERIA |
Trans MOSFET N-CH 40V 150A 3-Pin(3+Tab) TO-220AB Rail |
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PSMN2R1-40PLQ | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 150A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V Power Dissipation (Max): 293W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 87.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 9584 pF @ 25 V |
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PSMN2R1-40PLQ | Hersteller : Nexperia |
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PSMN2R1-40PLQ | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 1075A; 293W Mounting: THT Case: SOT78; TO220AB Kind of package: tube Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET On-state resistance: 2.2mΩ Gate-source voltage: ±20V Pulsed drain current: 1075A Power dissipation: 293W Gate charge: 168.9nC Polarisation: unipolar Drain current: 150A |
Produkt ist nicht verfügbar |