PSMN2R6-60PSQ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 150A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7629 pF @ 25 V
Description: MOSFET N-CH 60V 150A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7629 pF @ 25 V
auf Bestellung 53 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 7.75 EUR |
10+ | 6.5 EUR |
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Technische Details PSMN2R6-60PSQ Nexperia USA Inc.
Description: MOSFET N-CH 60V 150A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V, Power Dissipation (Max): 326W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7629 pF @ 25 V.
Weitere Produktangebote PSMN2R6-60PSQ nach Preis ab 3.85 EUR bis 11.91 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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PSMN2R6-60PSQ | Hersteller : Nexperia | MOSFET PSMN2R6-60PS/SOT78/SIL3P |
auf Bestellung 4949 Stücke: Lieferzeit 14-28 Tag (e) |
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PSMN2R6-60PSQ | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 961A; 326W Mounting: THT Case: SOT78; TO220AB Kind of package: tube Power dissipation: 326W Pulsed drain current: 961A Gate charge: 0.14µC Polarisation: unipolar Drain current: 150A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET On-state resistance: 5.6mΩ Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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PSMN2R6-60PSQ | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 961A; 326W Mounting: THT Case: SOT78; TO220AB Kind of package: tube Power dissipation: 326W Pulsed drain current: 961A Gate charge: 0.14µC Polarisation: unipolar Drain current: 150A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET On-state resistance: 5.6mΩ Gate-source voltage: ±20V |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN2R6-60PSQ | Hersteller : NEXPERIA | Trans MOSFET N-CH 60V 150A 3-Pin(3+Tab) TO-220AB Rail |
Produkt ist nicht verfügbar |