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PSMN2R6-60PSQ

PSMN2R6-60PSQ Nexperia USA Inc.


PSMN2R6-60PS.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 150A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7629 pF @ 25 V
auf Bestellung 53 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.75 EUR
10+ 6.5 EUR
Mindestbestellmenge: 4
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Technische Details PSMN2R6-60PSQ Nexperia USA Inc.

Description: MOSFET N-CH 60V 150A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V, Power Dissipation (Max): 326W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7629 pF @ 25 V.

Weitere Produktangebote PSMN2R6-60PSQ nach Preis ab 3.85 EUR bis 11.91 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
PSMN2R6-60PSQ PSMN2R6-60PSQ Hersteller : Nexperia PSMN2R6_60PS-2938830.pdf MOSFET PSMN2R6-60PS/SOT78/SIL3P
auf Bestellung 4949 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
7+7.85 EUR
10+ 6.6 EUR
50+ 5.1 EUR
100+ 3.98 EUR
500+ 3.95 EUR
1000+ 3.87 EUR
2500+ 3.85 EUR
Mindestbestellmenge: 7
PSMN2R6-60PSQ PSMN2R6-60PSQ Hersteller : NEXPERIA PSMN2R6-60PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 961A; 326W
Mounting: THT
Case: SOT78; TO220AB
Kind of package: tube
Power dissipation: 326W
Pulsed drain current: 961A
Gate charge: 0.14µC
Polarisation: unipolar
Drain current: 150A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
On-state resistance: 5.6mΩ
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
6+11.91 EUR
15+ 4.76 EUR
Mindestbestellmenge: 6
PSMN2R6-60PSQ PSMN2R6-60PSQ Hersteller : NEXPERIA PSMN2R6-60PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 961A; 326W
Mounting: THT
Case: SOT78; TO220AB
Kind of package: tube
Power dissipation: 326W
Pulsed drain current: 961A
Gate charge: 0.14µC
Polarisation: unipolar
Drain current: 150A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
On-state resistance: 5.6mΩ
Gate-source voltage: ±20V
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
6+11.91 EUR
Mindestbestellmenge: 6
PSMN2R6-60PSQ PSMN2R6-60PSQ Hersteller : NEXPERIA 3012955443312848psmn2r6-60ps.pdf Trans MOSFET N-CH 60V 150A 3-Pin(3+Tab) TO-220AB Rail
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