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PSMN2R7-30BL,118

PSMN2R7-30BL,118 Nexperia USA Inc.


PSMN2R7-30BL.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3954 pF @ 15 V
auf Bestellung 6400 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
800+2.43 EUR
1600+ 2.06 EUR
2400+ 1.96 EUR
5600+ 1.89 EUR
Mindestbestellmenge: 800
Produktrezensionen
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Technische Details PSMN2R7-30BL,118 Nexperia USA Inc.

Description: MOSFET N-CH 30V 100A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3954 pF @ 15 V.

Weitere Produktangebote PSMN2R7-30BL,118 nach Preis ab 2.88 EUR bis 4.34 EUR

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PSMN2R7-30BL,118 PSMN2R7-30BL,118 Hersteller : Nexperia USA Inc. PSMN2R7-30BL.pdf Description: MOSFET N-CH 30V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3954 pF @ 15 V
auf Bestellung 6693 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.34 EUR
10+ 3.61 EUR
100+ 2.88 EUR
Mindestbestellmenge: 6
PSMN2R7-30BL,118 PSMN2R7-30BL,118 Hersteller : NEXPERIA 3012745903107406psmn2r7-30bl.pdf Trans MOSFET N-CH 30V 100A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
PSMN2R7-30BL,118 Hersteller : NEXPERIA PSMN2R7-30BL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 730A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 730A
Power dissipation: 170W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN2R7-30BL,118 PSMN2R7-30BL,118 Hersteller : Nexperia PSMN2R7_30BL-2938831.pdf MOSFET PSMN2R7-30BL/SOT404/D2PAK
Produkt ist nicht verfügbar
PSMN2R7-30BL,118 Hersteller : NEXPERIA PSMN2R7-30BL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 730A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 730A
Power dissipation: 170W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar