Produkte > NEXPERIA USA INC. > PSMN2R8-80BS,118
PSMN2R8-80BS,118

PSMN2R8-80BS,118 Nexperia USA Inc.


PSMN2R8-80BS.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V
auf Bestellung 50400 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
800+5.18 EUR
1600+ 4.43 EUR
2400+ 4.18 EUR
5600+ 4.01 EUR
Mindestbestellmenge: 800
Produktrezensionen
Produktbewertung abgeben

Technische Details PSMN2R8-80BS,118 Nexperia USA Inc.

Description: MOSFET N-CH 80V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V, Power Dissipation (Max): 306W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V.

Weitere Produktangebote PSMN2R8-80BS,118 nach Preis ab 4.16 EUR bis 8.58 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
PSMN2R8-80BS,118 PSMN2R8-80BS,118 Hersteller : Nexperia PSMN2R8_80BS-2938993.pdf MOSFET PSMN2R8-80BS/SOT404/D2PAK
auf Bestellung 5866 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
7+7.88 EUR
10+ 6.73 EUR
25+ 6.27 EUR
100+ 5.38 EUR
250+ 5.33 EUR
500+ 5.2 EUR
800+ 4.16 EUR
Mindestbestellmenge: 7
PSMN2R8-80BS,118 PSMN2R8-80BS,118 Hersteller : Nexperia USA Inc. PSMN2R8-80BS.pdf Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V
auf Bestellung 51074 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+8.58 EUR
10+ 7.2 EUR
100+ 5.83 EUR
Mindestbestellmenge: 4
PSMN2R8-80BS,118 PSMN2R8-80BS,118 Hersteller : NEXPERIA NEXP-S-A0003059791-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: NEXPERIA - PSMN2R8-80BS,118 - Leistungs-MOSFET, n-Kanal, 80 V, 120 A, 0.00255 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 120A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 306W
Anzahl der Pins: 3Pin(s)
productTraceability: No
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.00255ohm
auf Bestellung 7649 Stücke:
Lieferzeit 14-21 Tag (e)
PSMN2R8-80BS,118 PSMN2R8-80BS,118 Hersteller : NEXPERIA NEXP-S-A0003059791-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: NEXPERIA - PSMN2R8-80BS,118 - Leistungs-MOSFET, n-Kanal, 80 V, 120 A, 0.00255 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 120A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 306W
Anzahl der Pins: 3Pin(s)
productTraceability: No
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.00255ohm
auf Bestellung 7649 Stücke:
Lieferzeit 14-21 Tag (e)
PSMN2R8-80BS,118 Hersteller : NEXPERIA PSMN2R8-80BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 824A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 824A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 6.12mΩ
Mounting: SMD
Gate charge: 139nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN2R8-80BS,118 Hersteller : NEXPERIA PSMN2R8-80BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 824A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 824A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 6.12mΩ
Mounting: SMD
Gate charge: 139nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar