auf Bestellung 8905 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 9.85 EUR |
| 10+ | 8.27 EUR |
| 50+ | 7.8 EUR |
| 100+ | 6.71 EUR |
| 250+ | 6.32 EUR |
| 500+ | 5.95 EUR |
| 1000+ | 5.1 EUR |
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Technische Details PSMN3R3-80PS,127 Nexperia
Description: MOSFET N-CH 80V 120A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V, Power Dissipation (Max): 338W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V.
Weitere Produktangebote PSMN3R3-80PS,127 nach Preis ab 5.14 EUR bis 10.56 EUR
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PSMN3R3-80PS,127 | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 80V 120A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V Power Dissipation (Max): 338W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V |
auf Bestellung 10525 Stücke: Lieferzeit 21-28 Tag (e) |
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PSMN3R3-80PS,127 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) TO-220AB Rail |
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PSMN3R3-80PS,127 | Hersteller : Nexperia |
Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) TO-220AB Rail |
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PSMN3R3-80PS,127 | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 830A; 338W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Pulsed drain current: 830A Power dissipation: 338W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: THT Gate charge: 139nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PSMN3R3-80PS,127 | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 830A; 338W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Pulsed drain current: 830A Power dissipation: 338W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: THT Gate charge: 139nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |