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PSMN3R5-40YSDX

PSMN3R5-40YSDX Nexperia USA Inc.

PSMN3R5-40YSD.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 115W (Ta)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 20 V
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1500+1.85 EUR
Mindestbestellmenge: 1500
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Technische Details PSMN3R5-40YSDX Nexperia USA Inc.

Description: MOSFET N-CH 40V 120A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Ta), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 115W (Ta), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 20 V.

Weitere Produktangebote PSMN3R5-40YSDX nach Preis ab 1.1 EUR bis 4.06 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
PSMN3R5-40YSDX PSMN3R5-40YSDX Hersteller : Nexperia PSMN3R5_40YSD-1544997.pdf MOSFET PSMN3R5-40YSD/SOT669/LFPAK
auf Bestellung 5352 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
19+2.81 EUR
23+ 2.31 EUR
100+ 1.8 EUR
500+ 1.52 EUR
1000+ 1.24 EUR
1500+ 1.17 EUR
3000+ 1.1 EUR
Mindestbestellmenge: 19
PSMN3R5-40YSDX PSMN3R5-40YSDX Hersteller : Nexperia USA Inc. PSMN3R5-40YSD.pdf Description: MOSFET N-CH 40V 120A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 115W (Ta)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 20 V
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.06 EUR
10+ 3.63 EUR
100+ 2.83 EUR
500+ 2.34 EUR
Mindestbestellmenge: 7
PSMN3R5-40YSDX Hersteller : NEXPERIA psmn3r5-40ysd.pdf N-channel 100 V Standard level MOSFET
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PSMN3R5-40YSDX Hersteller : NEXPERIA PSMN3R5-40YSD.pdf PSMN3R5-40YSDX SMD N channel transistors
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