PSMN3R7-100BSEJ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.95mOhm @ 25A, 10V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 246 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16370 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 15200 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 6.86 EUR |
| 1600+ | 5.88 EUR |
| 2400+ | 5.53 EUR |
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Technische Details PSMN3R7-100BSEJ Nexperia USA Inc.
Description: MOSFET N-CH 100V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.95mOhm @ 25A, 10V, Power Dissipation (Max): 405W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 246 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 16370 pF @ 50 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50.
Weitere Produktangebote PSMN3R7-100BSEJ nach Preis ab 5.56 EUR bis 11.44 EUR
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PSMN3R7-100BSEJ | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.95mOhm @ 25A, 10V Power Dissipation (Max): 405W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 246 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16370 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 |
auf Bestellung 16250 Stücke: Lieferzeit 21-28 Tag (e) |
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PSMN3R7-100BSEJ | Hersteller : Nexperia |
MOSFET PSMN3R7-100BSE/SOT404/D2PAK |
auf Bestellung 3598 Stücke: Lieferzeit 14-28 Tag (e) |
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PSMN3R7-100BSEJ | Hersteller : NEXPERIA |
Description: NEXPERIA - PSMN3R7-100BSEJ - Leistungs-MOSFET, n-Kanal, 100 V, 120 A, 0.00336 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.66V euEccn: NLR Verlustleistung: 405W Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00336ohm |
auf Bestellung 1797 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN3R7-100BSEJ | Hersteller : NEXPERIA |
Description: NEXPERIA - PSMN3R7-100BSEJ - Leistungs-MOSFET, n-Kanal, 100 V, 120 A, 0.00336 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Verlustleistung: 405W Kanaltyp: n-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.00336ohm rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 333 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN3R7-100BSEJ | Hersteller : NEXPERIA |
Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN3R7-100BSEJ | Hersteller : Nexperia |
Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| PSMN3R7-100BSEJ | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 780A; 405W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 780A Power dissipation: 405W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 10.7mΩ Mounting: SMD Gate charge: 246nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMN3R7-100BSEJ | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 780A; 405W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 780A Power dissipation: 405W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 10.7mΩ Mounting: SMD Gate charge: 246nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |