auf Bestellung 1480 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 30+ | 1.79 EUR |
| 33+ | 1.6 EUR |
| 100+ | 1.09 EUR |
| 500+ | 0.91 EUR |
| 1000+ | 0.77 EUR |
| 1500+ | 0.7 EUR |
| 3000+ | 0.65 EUR |
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Technische Details PSMN4R0-25YLC,115 Nexperia
Description: MOSFET N-CH 25V 84A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 84A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V, Power Dissipation (Max): 61W (Tc), Vgs(th) (Max) @ Id: 1.95V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 12 V.
Weitere Produktangebote PSMN4R0-25YLC,115
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| PSMN4R0-25YLC,115 | Hersteller : NEXPERIA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 25V; 84A; Idm: 336A; 61W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 84A Pulsed drain current: 336A Power dissipation: 61W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 22.8nC Kind of package: reel; tape Kind of channel: enhanced |
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PSMN4R0-25YLC,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 25V 84A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Power Dissipation (Max): 61W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 12 V |
Produkt ist nicht verfügbar |
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PSMN4R0-25YLC,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 25V 84A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Power Dissipation (Max): 61W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 12 V |
Produkt ist nicht verfügbar |
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| PSMN4R0-25YLC,115 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 84A; Idm: 336A; 61W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 84A Pulsed drain current: 336A Power dissipation: 61W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 22.8nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |