PSMN4R2-30MLDX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 70A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1795 pF @ 15 V
Description: MOSFET N-CH 30V 70A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1795 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1500+ | 0.94 EUR |
3000+ | 0.84 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMN4R2-30MLDX Nexperia USA Inc.
Description: MOSFET N-CH 30V 70A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 65W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: LFPAK33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1795 pF @ 15 V.
Weitere Produktangebote PSMN4R2-30MLDX nach Preis ab 0.73 EUR bis 2.21 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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PSMN4R2-30MLDX | Hersteller : Nexperia | MOSFET PSMN4R2-30MLD/SOT1210/mLFPAK |
auf Bestellung 26964 Stücke: Lieferzeit 14-28 Tag (e) |
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PSMN4R2-30MLDX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 70A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1795 pF @ 15 V |
auf Bestellung 3958 Stücke: Lieferzeit 21-28 Tag (e) |
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PSMN4R2-30MLDX | Hersteller : NEXPERIA |
Description: NEXPERIA - PSMN4R2-30MLDX - Leistungs-MOSFET, n-Kanal, 30 V, 70 A, 0.0035 ohm, SOT-1210, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 70A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 65W Anzahl der Pins: 5Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0035ohm |
auf Bestellung 63 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN4R2-30MLDX | Hersteller : NEXPERIA |
Description: NEXPERIA - PSMN4R2-30MLDX - Leistungs-MOSFET, n-Kanal, 30 V, 70 A, 0.0035 ohm, SOT-1210, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 70A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 65W Anzahl der Pins: 5Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0035ohm |
auf Bestellung 63 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN4R2-30MLDX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 70A; Idm: 366A; 65W Type of transistor: N-MOSFET Power dissipation: 65W Polarisation: unipolar Kind of package: reel; tape Gate charge: 19.6nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 366A Mounting: SMD Case: LFPAK33; SOT1210 Drain-source voltage: 30V Drain current: 70A On-state resistance: 4.5mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PSMN4R2-30MLDX | Hersteller : NEXPERIA | Trans MOSFET N-CH 30V 70A 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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PSMN4R2-30MLDX | Hersteller : Nexperia | Trans MOSFET N-CH 30V 70A 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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PSMN4R2-30MLDX | Hersteller : Nexperia | Trans MOSFET N-CH 30V 70A 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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PSMN4R2-30MLDX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 70A; Idm: 366A; 65W Type of transistor: N-MOSFET Power dissipation: 65W Polarisation: unipolar Kind of package: reel; tape Gate charge: 19.6nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 366A Mounting: SMD Case: LFPAK33; SOT1210 Drain-source voltage: 30V Drain current: 70A On-state resistance: 4.5mΩ |
Produkt ist nicht verfügbar |