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PSMN4R3-30BL,118

PSMN4R3-30BL,118 Nexperia USA Inc.


PSMN4R3-30BL.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 15A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
auf Bestellung 8800 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
800+2.04 EUR
1600+ 1.66 EUR
2400+ 1.56 EUR
5600+ 1.49 EUR
Mindestbestellmenge: 800
Produktrezensionen
Produktbewertung abgeben

Technische Details PSMN4R3-30BL,118 Nexperia USA Inc.

Description: MOSFET N-CH 30V 100A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 15A, 10V, Power Dissipation (Max): 103W (Tc), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V.

Weitere Produktangebote PSMN4R3-30BL,118 nach Preis ab 1.48 EUR bis 3.77 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
PSMN4R3-30BL,118 PSMN4R3-30BL,118 Hersteller : Nexperia PSMN4R3_30BL-2939108.pdf MOSFET PSMN4R3-30BL/SOT404/D2PAK
auf Bestellung 16386 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
15+3.59 EUR
18+ 2.94 EUR
100+ 2.28 EUR
500+ 1.85 EUR
800+ 1.52 EUR
2400+ 1.5 EUR
4800+ 1.48 EUR
Mindestbestellmenge: 15
PSMN4R3-30BL,118 PSMN4R3-30BL,118 Hersteller : Nexperia USA Inc. PSMN4R3-30BL.pdf Description: MOSFET N-CH 30V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 15A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
auf Bestellung 9900 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.77 EUR
10+ 3.09 EUR
100+ 2.4 EUR
Mindestbestellmenge: 7
PSMN4R3-30BL,118 PSMN4R3-30BL,118 Hersteller : NEXPERIA 3009237720866240psmn4r3-30bl.pdf Trans MOSFET N-CH 30V 100A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
PSMN4R3-30BL,118 Hersteller : NEXPERIA PSMN4R3-30BL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 465A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 465A
Power dissipation: 103W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 6.65mΩ
Mounting: SMD
Gate charge: 41.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN4R3-30BL,118 PSMN4R3-30BL,118 Hersteller : Nexperia 3009237720866240psmn4r3-30bl.pdf Trans MOSFET N-CH 30V 100A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
PSMN4R3-30BL,118 Hersteller : NEXPERIA PSMN4R3-30BL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 465A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 465A
Power dissipation: 103W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 6.65mΩ
Mounting: SMD
Gate charge: 41.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar