PSMN4R3-30BL,118 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 15A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Description: MOSFET N-CH 30V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 15A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
auf Bestellung 8800 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
800+ | 2.04 EUR |
1600+ | 1.66 EUR |
2400+ | 1.56 EUR |
5600+ | 1.49 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMN4R3-30BL,118 Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 15A, 10V, Power Dissipation (Max): 103W (Tc), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V.
Weitere Produktangebote PSMN4R3-30BL,118 nach Preis ab 1.48 EUR bis 3.77 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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PSMN4R3-30BL,118 | Hersteller : Nexperia | MOSFET PSMN4R3-30BL/SOT404/D2PAK |
auf Bestellung 16386 Stücke: Lieferzeit 14-28 Tag (e) |
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PSMN4R3-30BL,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 100A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 15A, 10V Power Dissipation (Max): 103W (Tc) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V |
auf Bestellung 9900 Stücke: Lieferzeit 21-28 Tag (e) |
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PSMN4R3-30BL,118 | Hersteller : NEXPERIA | Trans MOSFET N-CH 30V 100A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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PSMN4R3-30BL,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 465A; 103W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 465A Power dissipation: 103W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 6.65mΩ Mounting: SMD Gate charge: 41.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PSMN4R3-30BL,118 | Hersteller : Nexperia | Trans MOSFET N-CH 30V 100A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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PSMN4R3-30BL,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 465A; 103W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 465A Power dissipation: 103W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 6.65mΩ Mounting: SMD Gate charge: 41.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |