PSMN4R3-80ES,127 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 80V 120A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8161 pF @ 40 V
auf Bestellung 1490 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 251+ | 2.88 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMN4R3-80ES,127 Nexperia USA Inc.
Description: MOSFET N-CH 80V 120A I2PAK, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V, Power Dissipation (Max): 306W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: I2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8161 pF @ 40 V.
Weitere Produktangebote PSMN4R3-80ES,127 nach Preis ab 2.88 EUR bis 2.88 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
|---|---|---|---|---|---|---|---|---|---|
 |
PSMN4R3-80ES,127 | Hersteller : Nexperia |
MOSFET N-Ch 80V 4.3 mOhms |
auf Bestellung 490 Stücke: Lieferzeit 14-28 Tag (e) |
|||||
| PSMN4R3-80ES,127 | Hersteller : NXP USA Inc. |
Description: MOSFET N-CH 80V 120A I2PAK Packaging: Tube |
auf Bestellung 540 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||
 |
PSMN4R3-80ES,127 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) I2PAK Rail |
Produkt ist nicht verfügbar |
|||||
|
|
PSMN4R3-80ES,127 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 120A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: I2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8161 pF @ 40 V |
Produkt ist nicht verfügbar |