PSMN4R4-80BS,118 NEXPERIA
Hersteller: NEXPERIACategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 680A; 306W
Pulsed drain current: 680A
Power dissipation: 306W
Gate charge: 125nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK; SOT404
On-state resistance: 9.12mΩ
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 579 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 19+ | 3.93 EUR |
| 21+ | 3.53 EUR |
| 27+ | 2.65 EUR |
| 29+ | 2.51 EUR |
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Technische Details PSMN4R4-80BS,118 NEXPERIA
Description: MOSFET N-CH 80V 100A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V, Power Dissipation (Max): 306W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 40 V.
Weitere Produktangebote PSMN4R4-80BS,118 nach Preis ab 2.51 EUR bis 7.28 EUR
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PSMN4R4-80BS,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 680A; 306W Pulsed drain current: 680A Power dissipation: 306W Gate charge: 125nC Polarisation: unipolar Drain current: 100A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: D2PAK; SOT404 On-state resistance: 9.12mΩ Mounting: SMD |
auf Bestellung 579 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN4R4-80BS,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 100A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 40 V |
auf Bestellung 7200 Stücke: Lieferzeit 21-28 Tag (e) |
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PSMN4R4-80BS,118 | Hersteller : Nexperia |
MOSFET PSMN4R4-80BS/SOT404/D2PAK |
auf Bestellung 4442 Stücke: Lieferzeit 14-28 Tag (e) |
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PSMN4R4-80BS,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 100A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 40 V |
auf Bestellung 7925 Stücke: Lieferzeit 21-28 Tag (e) |
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PSMN4R4-80BS,118 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 80V 100A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |