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PSMN4R5-40PS,127

PSMN4R5-40PS,127 Nexperia


PSMN4R5_40PS-2938955.pdf Hersteller: Nexperia
MOSFET PSMN4R5-40PS/SOT78/SIL3P
auf Bestellung 6555 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
13+4.24 EUR
17+ 3.12 EUR
100+ 2.68 EUR
250+ 2.65 EUR
500+ 2.39 EUR
1000+ 2.14 EUR
Mindestbestellmenge: 13
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Technische Details PSMN4R5-40PS,127 Nexperia

Description: MOSFET N-CH 40V 100A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V, Power Dissipation (Max): 148W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 12 V.

Weitere Produktangebote PSMN4R5-40PS,127 nach Preis ab 2.09 EUR bis 4.84 EUR

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PSMN4R5-40PS,127 PSMN4R5-40PS,127 Hersteller : Nexperia USA Inc. PSMN4R5-40PS.pdf Description: MOSFET N-CH 40V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 12 V
auf Bestellung 8986 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.84 EUR
10+ 4 EUR
100+ 3.18 EUR
500+ 2.69 EUR
1000+ 2.29 EUR
2000+ 2.17 EUR
5000+ 2.09 EUR
Mindestbestellmenge: 6
PSMN4R5-40PS,127 Hersteller : NEXPERIA PSMN4R5-40PS.pdf PSMN4R5-40PS.127 THT N channel transistors
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