auf Bestellung 1057 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 6.76 EUR |
| 12+ | 4.65 EUR |
| 100+ | 3.98 EUR |
| 500+ | 3.64 EUR |
| 1000+ | 3.09 EUR |
| 2500+ | 3.07 EUR |
| 5000+ | 2.99 EUR |
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Technische Details PSMN4R6-60PS,127 Nexperia
Description: MOSFET N-CH 60V 100A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V, Power Dissipation (Max): 211W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 70.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4426 pF @ 30 V.
Weitere Produktangebote PSMN4R6-60PS,127 nach Preis ab 2.96 EUR bis 6.81 EUR
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PSMN4R6-60PS,127 | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 60V 100A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V Power Dissipation (Max): 211W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 70.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4426 pF @ 30 V |
auf Bestellung 7709 Stücke: Lieferzeit 21-28 Tag (e) |
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PSMN4R6-60PS,127 | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 565A Power dissipation: 211W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 8.05mΩ Mounting: THT Gate charge: 70.8nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PSMN4R6-60PS,127 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-220AB Rail |
Produkt ist nicht verfügbar |
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PSMN4R6-60PS,127 | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 565A Power dissipation: 211W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 8.05mΩ Mounting: THT Gate charge: 70.8nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |