PSMN4R8-100PSEQ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 100V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 278 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 50 V
auf Bestellung 4980 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 12.32 EUR |
| 10+ | 10.35 EUR |
| 100+ | 8.37 EUR |
| 500+ | 7.44 EUR |
| 1000+ | 6.37 EUR |
| 2000+ | 6 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMN4R8-100PSEQ Nexperia USA Inc.
Description: MOSFET N-CH 100V 120A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tj), Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V, Power Dissipation (Max): 405W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 278 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 50 V.
Weitere Produktangebote PSMN4R8-100PSEQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
PSMN4R8-100PSEQ | Hersteller : NEXPERIA |
Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) TO-220AB Rail |
Produkt ist nicht verfügbar |
|
 |
PSMN4R8-100PSEQ | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 693A; Idm: 693A; 405W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 693A Pulsed drain current: 693A Power dissipation: 405W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 4.3mΩ Mounting: THT Gate charge: 196nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
 |
PSMN4R8-100PSEQ | Hersteller : Nexperia |
MOSFET PSMN4R8-100PSE/SOT78/SIL3P |
Produkt ist nicht verfügbar |
|
|
|
PSMN4R8-100PSEQ | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 693A; Idm: 693A; 405W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 693A Pulsed drain current: 693A Power dissipation: 405W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 4.3mΩ Mounting: THT Gate charge: 196nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |