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PSMN5R0-40MSHX

PSMN5R0-40MSHX Nexperia


PSMN5R0-40MSH-1853398.pdf Hersteller: Nexperia
MOSFET PSMN5R0-40MSH/SOT1210/mLFPAK
auf Bestellung 2964 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
20+2.73 EUR
23+ 2.26 EUR
100+ 1.76 EUR
500+ 1.49 EUR
1000+ 1.22 EUR
1500+ 1.21 EUR
3000+ 1.09 EUR
Mindestbestellmenge: 20
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Technische Details PSMN5R0-40MSHX Nexperia

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 62A; Idm: 349A, Power dissipation: 83W, Case: LFPAK33; SOT1210, Mounting: SMD, Kind of package: reel; tape, Technology: NextPowerS3, Drain-source voltage: 40V, Drain current: 62A, On-state resistance: 10.9mΩ, Gate charge: 29nC, Polarisation: unipolar, Kind of channel: enhanced, Pulsed drain current: 349A, Gate-source voltage: ±20V, Type of transistor: N-MOSFET.

Weitere Produktangebote PSMN5R0-40MSHX

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PSMN5R0-40MSHX Hersteller : NEXPERIA PSMN5R0-40MSH.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 62A; Idm: 349A
Power dissipation: 83W
Case: LFPAK33; SOT1210
Mounting: SMD
Kind of package: reel; tape
Technology: NextPowerS3
Drain-source voltage: 40V
Drain current: 62A
On-state resistance: 10.9mΩ
Gate charge: 29nC
Polarisation: unipolar
Kind of channel: enhanced
Pulsed drain current: 349A
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
PSMN5R0-40MSHX PSMN5R0-40MSHX Hersteller : Nexperia USA Inc. PSMN5R0-40MSH.pdf Description: MOSFET N-CH 40V 85A LFPAK33
Produkt ist nicht verfügbar
PSMN5R0-40MSHX PSMN5R0-40MSHX Hersteller : Nexperia USA Inc. PSMN5R0-40MSH.pdf Description: MOSFET N-CH 40V 85A LFPAK33
Produkt ist nicht verfügbar
PSMN5R0-40MSHX Hersteller : NEXPERIA PSMN5R0-40MSH.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 62A; Idm: 349A
Power dissipation: 83W
Case: LFPAK33; SOT1210
Mounting: SMD
Kind of package: reel; tape
Technology: NextPowerS3
Drain-source voltage: 40V
Drain current: 62A
On-state resistance: 10.9mΩ
Gate charge: 29nC
Polarisation: unipolar
Kind of channel: enhanced
Pulsed drain current: 349A
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar