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PSMN5R0-80BS,118

PSMN5R0-80BS,118 Nexperia USA Inc.

PSMN5R0-80BS.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 25A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6793 pF @ 40 V
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
800+3.83 EUR
1600+ 3.25 EUR
2400+ 3.09 EUR
Mindestbestellmenge: 800
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Technische Details PSMN5R0-80BS,118 Nexperia USA Inc.

Description: MOSFET N-CH 80V 100A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 5.1mOhm @ 25A, 10V, Power Dissipation (Max): 270W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6793 pF @ 40 V.

Weitere Produktangebote PSMN5R0-80BS,118 nach Preis ab 2.96 EUR bis 6.84 EUR

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PSMN5R0-80BS,118 PSMN5R0-80BS,118 Hersteller : Nexperia PSMN5R0_80BS-2939064.pdf MOSFET PSMN5R0-80BS/SOT404/D2PAK
auf Bestellung 3198 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+6.58 EUR
10+ 5.46 EUR
100+ 4.34 EUR
250+ 4 EUR
500+ 3.64 EUR
800+ 3.09 EUR
2400+ 2.96 EUR
Mindestbestellmenge: 8
PSMN5R0-80BS,118 PSMN5R0-80BS,118 Hersteller : Nexperia USA Inc. PSMN5R0-80BS.pdf Description: MOSFET N-CH 80V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 25A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6793 pF @ 40 V
auf Bestellung 4795 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.84 EUR
10+ 5.69 EUR
100+ 4.53 EUR
Mindestbestellmenge: 4
PSMN5R0-80BS,118 Hersteller : NEXPERIA PSMN5R0-80BS.pdf PSMN5R0-80BS.118 SMD N channel transistors
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