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PSMN5R6-100BS,118

PSMN5R6-100BS,118 Nexperia USA Inc.


PSMN5R6-100BS.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8061 pF @ 50 V
auf Bestellung 2400 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
800+4.2 EUR
1600+ 3.59 EUR
2400+ 3.38 EUR
Mindestbestellmenge: 800
Produktrezensionen
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Technische Details PSMN5R6-100BS,118 Nexperia USA Inc.

Description: MOSFET N-CH 100V 100A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V, Power Dissipation (Max): 306W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8061 pF @ 50 V.

Weitere Produktangebote PSMN5R6-100BS,118 nach Preis ab 3.41 EUR bis 6.99 EUR

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PSMN5R6-100BS,118 PSMN5R6-100BS,118 Hersteller : Nexperia USA Inc. PSMN5R6-100BS.pdf Description: MOSFET N-CH 100V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8061 pF @ 50 V
auf Bestellung 3181 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.94 EUR
10+ 5.83 EUR
100+ 4.72 EUR
Mindestbestellmenge: 4
PSMN5R6-100BS,118 PSMN5R6-100BS,118 Hersteller : Nexperia PSMN5R6_100BS-2939097.pdf MOSFET PSMN5R6-100BS/SOT404/D2PAK
auf Bestellung 1491 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+6.99 EUR
10+ 5.88 EUR
100+ 4.76 EUR
800+ 3.59 EUR
2400+ 3.41 EUR
Mindestbestellmenge: 8
PSMN5R6-100BS,118 PSMN5R6-100BS,118 Hersteller : NEXPERIA 3008649988557092psmn5r6-100bs.pdf Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
PSMN5R6-100BS,118 Hersteller : NEXPERIA PSMN5R6-100BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 539A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 539A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13.22mΩ
Mounting: SMD
Gate charge: 141nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PSMN5R6-100BS,118 Hersteller : NEXPERIA PSMN5R6-100BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 539A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 539A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13.22mΩ
Mounting: SMD
Gate charge: 141nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar