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PSMN6R0-30YL,115

PSMN6R0-30YL,115 Nexperia USA Inc.


PSMN6R0-30YL.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 79A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 12 V
auf Bestellung 1500 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1500+0.79 EUR
Mindestbestellmenge: 1500
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Technische Details PSMN6R0-30YL,115 Nexperia USA Inc.

Description: MOSFET N-CH 30V 79A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 79A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V, Power Dissipation (Max): 55W (Tc), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 12 V.

Weitere Produktangebote PSMN6R0-30YL,115 nach Preis ab 0.81 EUR bis 2.1 EUR

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PSMN6R0-30YL,115 PSMN6R0-30YL,115 Hersteller : Nexperia USA Inc. PSMN6R0-30YL.pdf Description: MOSFET N-CH 30V 79A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 12 V
auf Bestellung 2130 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
15+1.85 EUR
17+ 1.61 EUR
100+ 1.11 EUR
500+ 0.93 EUR
Mindestbestellmenge: 15
PSMN6R0-30YL,115 PSMN6R0-30YL,115 Hersteller : Nexperia PSMN6R0_30YL-2939078.pdf MOSFET PSMN6R0-30YL/SOT669/LFPAK
auf Bestellung 39 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
25+2.1 EUR
29+ 1.86 EUR
100+ 1.42 EUR
500+ 1.13 EUR
1000+ 0.9 EUR
1500+ 0.81 EUR
Mindestbestellmenge: 25
PSMN6R0-30YL,115 PSMN6R0-30YL,115 Hersteller : NEXPERIA 4380847652677411psmn6r0-30yl.pdf Trans MOSFET N-CH 30V 79A 5-Pin(4+Tab) LFPAK T/R
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PSMN6R0-30YL,115 Hersteller : NEXPERIA PSMN6R0-30YL.pdf PSMN6R0-30YL.115 SMD N channel transistors
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