PSMN6R5-25YLC,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 64A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1093 pF @ 12 V
Description: MOSFET N-CH 25V 64A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1093 pF @ 12 V
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1500+ | 0.46 EUR |
3000+ | 0.42 EUR |
4500+ | 0.4 EUR |
7500+ | 0.38 EUR |
10500+ | 0.36 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMN6R5-25YLC,115 Nexperia USA Inc.
Description: NEXPERIA - PSMN6R5-25YLC,115 - Leistungs-MOSFET, n-Kanal, 25 V, 64 A, 0.0055 ohm, LFPAK56, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 25V, rohsCompliant: YES, Dauer-Drainstrom Id: 64A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1.54V, euEccn: NLR, Verlustleistung: 48W, Bauform - Transistor: LFPAK56, Anzahl der Pins: 4Pin(s), Produktpalette: NextPower, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.0055ohm, SVHC: No SVHC (27-Jun-2024).
Weitere Produktangebote PSMN6R5-25YLC,115 nach Preis ab 0.34 EUR bis 1.67 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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PSMN6R5-25YLC,115 | Hersteller : Nexperia | MOSFETs PSMN6R5-25YLC/SOT669/LFPAK |
auf Bestellung 3174 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN6R5-25YLC,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 25V 64A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1093 pF @ 12 V |
auf Bestellung 11480 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN6R5-25YLC,115 | Hersteller : NEXPERIA |
Description: NEXPERIA - PSMN6R5-25YLC,115 - Leistungs-MOSFET, n-Kanal, 25 V, 64 A, 0.0055 ohm, LFPAK56, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 25V rohsCompliant: YES Dauer-Drainstrom Id: 64A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.54V euEccn: NLR Verlustleistung: 48W Bauform - Transistor: LFPAK56 Anzahl der Pins: 4Pin(s) Produktpalette: NextPower productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0055ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 1498 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN6R5-25YLC,115 | Hersteller : NEXPERIA |
Description: NEXPERIA - PSMN6R5-25YLC,115 - Leistungs-MOSFET, n-Kanal, 25 V, 64 A, 0.0055 ohm, LFPAK56, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 25V rohsCompliant: YES Dauer-Drainstrom Id: 64A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.54V euEccn: NLR Verlustleistung: 48W Bauform - Transistor: LFPAK56 Anzahl der Pins: 4Pin(s) Produktpalette: NextPower productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0055ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 1498 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN6R5-25YLC,115 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 48W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 45A Power dissipation: 48W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 13.6mΩ Mounting: SMD Gate charge: 17.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PSMN6R5-25YLC,115 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 48W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 45A Power dissipation: 48W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 13.6mΩ Mounting: SMD Gate charge: 17.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |