PSMN7R0-30MLC,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 67A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1076 pF @ 15 V
Description: MOSFET N-CH 30V 67A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1076 pF @ 15 V
auf Bestellung 16500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1500+ | 0.59 EUR |
3000+ | 0.53 EUR |
7500+ | 0.5 EUR |
10500+ | 0.46 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMN7R0-30MLC,115 Nexperia USA Inc.
Description: NEXPERIA - PSMN7R0-30MLC,115 - Leistungs-MOSFET, n-Kanal, 30 V, 67 A, 0.00605 ohm, SOT-1210, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 67A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Verlustleistung Pd: 57W, Gate-Source-Schwellenspannung, max.: 1.75V, euEccn: NLR, Verlustleistung: 57W, Bauform - Transistor: SOT-1210, Anzahl der Pins: 4Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.00605ohm, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.00605ohm, SVHC: Lead (17-Jan-2023).
Weitere Produktangebote PSMN7R0-30MLC,115 nach Preis ab 0.5 EUR bis 1.38 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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PSMN7R0-30MLC,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 67A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1076 pF @ 15 V |
auf Bestellung 19267 Stücke: Lieferzeit 21-28 Tag (e) |
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PSMN7R0-30MLC,115 | Hersteller : Nexperia | MOSFET PSMN7R0-30MLC/SOT1210/mLFPAK |
auf Bestellung 6828 Stücke: Lieferzeit 14-28 Tag (e) |
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PSMN7R0-30MLC,115 | Hersteller : NEXPERIA |
Description: NEXPERIA - PSMN7R0-30MLC,115 - Leistungs-MOSFET, n-Kanal, 30 V, 67 A, 0.00605 ohm, SOT-1210, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 67A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 57W Gate-Source-Schwellenspannung, max.: 1.75V euEccn: NLR Verlustleistung: 57W Bauform - Transistor: SOT-1210 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.00605ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00605ohm SVHC: Lead (17-Jan-2023) |
auf Bestellung 2516 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN7R0-30MLC,115 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 270A; 57W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 67A Pulsed drain current: 270A Power dissipation: 57W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PSMN7R0-30MLC,115 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 270A; 57W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 67A Pulsed drain current: 270A Power dissipation: 57W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |