PSMN8R0-40BS,118 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 77A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 12 V
Description: MOSFET N-CH 40V 77A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 12 V
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
800+ | 1.84 EUR |
1600+ | 1.5 EUR |
2400+ | 1.41 EUR |
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Technische Details PSMN8R0-40BS,118 Nexperia USA Inc.
Description: MOSFET N-CH 40V 77A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 77A (Tc), Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V, Power Dissipation (Max): 86W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 12 V.
Weitere Produktangebote PSMN8R0-40BS,118 nach Preis ab 1.35 EUR bis 3.41 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
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PSMN8R0-40BS,118 | Hersteller : Nexperia | MOSFET PSMN8R0-40BS/SOT404/D2PAK |
auf Bestellung 4358 Stücke: Lieferzeit 14-28 Tag (e) |
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PSMN8R0-40BS,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 77A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 12 V |
auf Bestellung 4531 Stücke: Lieferzeit 21-28 Tag (e) |
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PSMN8R0-40BS,118 | Hersteller : NEXPERIA | Trans MOSFET N-CH 40V 77A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN8R0-40BS,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 55A Pulsed drain current: 309A Power dissipation: 86W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PSMN8R0-40BS,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 55A Pulsed drain current: 309A Power dissipation: 86W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |