PSMN8R7-80BS,118 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 90A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3346 pF @ 40 V
Description: MOSFET N-CH 80V 90A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3346 pF @ 40 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
800+ | 1.17 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMN8R7-80BS,118 Nexperia USA Inc.
Description: NEXPERIA - PSMN8R7-80BS,118 - Leistungs-MOSFET, n-Kanal, 80 V, 90 A, 0.0075 ohm, TO-263 (D2PAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 80V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 90A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3V, euEccn: NLR, Verlustleistung: 170W, Bauform - Transistor: TO-263 (D2PAK), Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.0075ohm, SVHC: Lead (27-Jun-2024).
Weitere Produktangebote PSMN8R7-80BS,118 nach Preis ab 1.24 EUR bis 2.75 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
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PSMN8R7-80BS,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 90A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3346 pF @ 40 V |
auf Bestellung 5392 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN8R7-80BS,118 | Hersteller : Nexperia | MOSFETs PSMN8R7-80BS/SOT404/D2PAK |
auf Bestellung 4690 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN8R7-80BS,118 | Hersteller : NEXPERIA |
Description: NEXPERIA - PSMN8R7-80BS,118 - Leistungs-MOSFET, n-Kanal, 80 V, 90 A, 0.0075 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: Y-EX Dauer-Drainstrom Id: 90A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 170W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0075ohm SVHC: Lead (27-Jun-2024) |
auf Bestellung 1818 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN8R7-80BS,118 | Hersteller : NEXPERIA | Trans MOSFET N-CH 80V 90A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 4800 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN8R7-80BS,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 361A; 170W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 90A Pulsed drain current: 361A Power dissipation: 170W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 52nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PSMN8R7-80BS,118 | Hersteller : Nexperia | Trans MOSFET N-CH 80V 90A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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PSMN8R7-80BS,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 361A; 170W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 90A Pulsed drain current: 361A Power dissipation: 170W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 52nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |