PSMN8R7-80PS,127 NEXPERIA
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 361A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 90A
Pulsed drain current: 361A
Power dissipation: 170W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 361A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 90A
Pulsed drain current: 361A
Power dissipation: 170W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
29+ | 2.47 EUR |
33+ | 2.23 EUR |
43+ | 1.67 EUR |
46+ | 1.58 EUR |
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Produktbewertung abgeben
Technische Details PSMN8R7-80PS,127 NEXPERIA
Description: MOSFET N-CH 80V 90A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3346 pF @ 40 V.
Weitere Produktangebote PSMN8R7-80PS,127 nach Preis ab 1.58 EUR bis 5.3 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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PSMN8R7-80PS,127 | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 90A; Idm: 361A; 170W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 90A Pulsed drain current: 361A Power dissipation: 170W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: THT Gate charge: 52nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 77 Stücke: Lieferzeit 7-14 Tag (e) |
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PSMN8R7-80PS,127 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 90A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3346 pF @ 40 V |
auf Bestellung 3956 Stücke: Lieferzeit 21-28 Tag (e) |
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PSMN8R7-80PS,127 | Hersteller : Nexperia | MOSFET PSMN8R7-80PS/SOT78/SIL3P |
auf Bestellung 3793 Stücke: Lieferzeit 14-28 Tag (e) |
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PSMN8R7-80PS,127 | Hersteller : NEXPERIA | Trans MOSFET N-CH 80V 90A 3-Pin(3+Tab) TO-220AB Rail |
auf Bestellung 3450 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN8R7-80PS,127 Produktcode: 152615 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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PSMN8R7-80PS,127 | Hersteller : Nexperia | Trans MOSFET N-CH 80V 90A 3-Pin(3+Tab) TO-220AB Rail |
Produkt ist nicht verfügbar |