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PSMN9R1-30YL,115

PSMN9R1-30YL,115 Nexperia USA Inc.

PSMN9R1-30YL.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 57A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 15A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 894 pF @ 15 V
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1500+0.66 EUR
Mindestbestellmenge: 1500
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Technische Details PSMN9R1-30YL,115 Nexperia USA Inc.

Description: MOSFET N-CH 30V 57A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 57A (Tc), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 15A, 10V, Power Dissipation (Max): 52W (Tc), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 894 pF @ 15 V.

Weitere Produktangebote PSMN9R1-30YL,115 nach Preis ab 0.52 EUR bis 1.53 EUR

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Preis ohne MwSt
PSMN9R1-30YL,115 PSMN9R1-30YL,115 Hersteller : Nexperia PSMN9R1_30YL-2938997.pdf MOSFET PSMN9R1-30YL/SOT669/LFPAK
auf Bestellung 3253 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
35+1.49 EUR
40+ 1.32 EUR
100+ 1.01 EUR
500+ 0.8 EUR
1000+ 0.64 EUR
1500+ 0.58 EUR
9000+ 0.52 EUR
Mindestbestellmenge: 35
PSMN9R1-30YL,115 PSMN9R1-30YL,115 Hersteller : Nexperia USA Inc. PSMN9R1-30YL.pdf Description: MOSFET N-CH 30V 57A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 15A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 894 pF @ 15 V
auf Bestellung 2994 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.53 EUR
20+ 1.36 EUR
100+ 1.04 EUR
500+ 0.82 EUR
Mindestbestellmenge: 17
PSMN9R1-30YL,115 PSMN9R1-30YL,115 Hersteller : NEXPERIA 4374353343245661psmn9r1-30yl.pdf Trans MOSFET N-CH 30V 57A 5-Pin(4+Tab) LFPAK T/R
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PSMN9R1-30YL,115 Hersteller : NEXPERIA PSMN9R1-30YL.pdf PSMN9R1-30YL.115 SMD N channel transistors
Produkt ist nicht verfügbar