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RD3L080SNTL1

RD3L080SNTL1 Rohm Semiconductor


datasheet?p=RD3L080SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 8A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
auf Bestellung 7500 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.06 EUR
5000+ 1.01 EUR
Mindestbestellmenge: 2500
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Technische Details RD3L080SNTL1 Rohm Semiconductor

Description: MOSFET N-CH 60V 8A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 8A, 10V, Power Dissipation (Max): 15W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V.

Weitere Produktangebote RD3L080SNTL1 nach Preis ab 1.12 EUR bis 2.55 EUR

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RD3L080SNTL1 RD3L080SNTL1 Hersteller : Rohm Semiconductor datasheet?p=RD3L080SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 60V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 8A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
auf Bestellung 7542 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.55 EUR
13+ 2.09 EUR
100+ 1.62 EUR
500+ 1.38 EUR
1000+ 1.12 EUR
Mindestbestellmenge: 11
RD3L080SNTL1 RD3L080SNTL1 Hersteller : ROHM Semiconductor rd3l080sntl-e-1308158.pdf MOSFET Nch 60V 8A TO-252 (DPAK)
auf Bestellung 2360 Stücke:
Lieferzeit 14-28 Tag (e)
RD3L080SNTL1 Hersteller : ROHM SEMICONDUCTOR datasheet?p=RD3L080SN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key RD3L080SNTL1 SMD N channel transistors
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