RF1S23N06LE

RF1S23N06LE Harris Corporation


INSLS12758-1.pdf?t.download=true&u=5oefqw Hersteller: Harris Corporation
Description: 23A, 60V, 0.065OHM, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 23A, 5V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
auf Bestellung 2400 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
423+1.75 EUR
Mindestbestellmenge: 423
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Technische Details RF1S23N06LE Harris Corporation

Description: 23A, 60V, 0.065OHM, N-CHANNEL,, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 23A, 5V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: I2PAK (TO-262), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V.

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RF1S23N06LE INSLS12758-1.pdf?t.download=true&u=5oefqw
auf Bestellung 3789 Stücke:
Lieferzeit 21-28 Tag (e)