Technische Details RFD3055SM9A PHI
Description: MOSFET N-CH 60V 12A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V, Power Dissipation (Max): 53W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V.
Weitere Produktangebote RFD3055SM9A
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| RFD3055SM9A | Hersteller : Fairchild |
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auf Bestellung 17500 Stücke: Lieferzeit 21-28 Tag (e) |
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RFD3055SM9A | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 60V 12A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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RFD3055SM9A | Hersteller : onsemi |
Description: MOSFET N-CH 60V 12A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Power Dissipation (Max): 53W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
Produkt ist nicht verfügbar |