RFP30N06LE
Hersteller: auf Bestellung 5750 Stücke:
Lieferzeit 21-28 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details RFP30N06LE
Description: MOSFET N-CH 60V 30A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), Rds On (Max) @ Id, Vgs: 47mOhm @ 30A, 5V, Power Dissipation (Max): 96W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +10V, -8V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V.
Weitere Produktangebote RFP30N06LE
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
RFP30N06LE | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 60V 30A 3-Pin(3+Tab) TO-220AB Rail |
Produkt ist nicht verfügbar |
|
 |
RFP30N06LE | Hersteller : onsemi |
Description: MOSFET N-CH 60V 30A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 47mOhm @ 30A, 5V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +10V, -8V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V |
Produkt ist nicht verfügbar |
|
 |
RFP30N06LE | Hersteller : onsemi / Fairchild |
MOSFET TO-220AB N-Ch Power |
Produkt ist nicht verfügbar |