RGF1MHE3_A/H

RGF1MHE3_A/H Vishay General Semiconductor


rgf1-1147728.pdf Hersteller: Vishay General Semiconductor
Rectifiers 1A,1000V,500NS,FS. AEC-Q101 Qualified
auf Bestellung 5403 Stücke:

Lieferzeit 14-28 Tag (e)
Produktrezensionen
Produktbewertung abgeben

Technische Details RGF1MHE3_A/H Vishay General Semiconductor

Description: DIODE GEN PURP 1KV 1A DO214BA, Packaging: Tape & Reel (TR), Package / Case: DO-214BA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 500 ns, Technology: Standard, Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-214BA (GF1), Operating Temperature - Junction: -65°C ~ 175°C, Grade: Automotive, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V, Qualification: AEC-Q101.

Weitere Produktangebote RGF1MHE3_A/H

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RGF1MHE3_A/H Hersteller : Vishay rgf1.pdf 1A,1000V,500NS,FS. SUPERECT,SMD
Produkt ist nicht verfügbar
RGF1MHE3_A/H Hersteller : Vishay General Semiconductor - Diodes Division rgf1.pdf Description: DIODE GEN PURP 1KV 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar