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RGP30M-E3/73

RGP30M-E3/73 Vishay General Semiconductor

rgp30a.pdf Hersteller: Vishay General Semiconductor
Diodes - General Purpose, Power, Switching 1000 Volt 3.0A 500ns 125 Amp IFSM
auf Bestellung 5618 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
16+3.25 EUR
20+ 2.65 EUR
100+ 2.05 EUR
500+ 1.74 EUR
1000+ 1.41 EUR
2000+ 1.33 EUR
5000+ 1.27 EUR
Mindestbestellmenge: 16
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Technische Details RGP30M-E3/73 Vishay General Semiconductor

Description: DIODE GEN PURP 1KV 3A DO201AD, Packaging: Tape & Box (TB), Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 500 ns, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-201AD, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V.

Weitere Produktangebote RGP30M-E3/73 nach Preis ab 1.97 EUR bis 3.64 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RGP30M-E3/73 RGP30M-E3/73 Hersteller : Vishay General Semiconductor - Diodes Division rgp30a.pdf Description: DIODE GEN PURP 1KV 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 883 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.64 EUR
10+ 2.98 EUR
100+ 2.32 EUR
500+ 1.97 EUR
Mindestbestellmenge: 8
RGP30M-E3/73 RGP30M-E3/73 Hersteller : Vishay rgp30a.pdf Rectifier Diode Switching 1KV 3A 500ns 2-Pin DO-201AD Ammo
Produkt ist nicht verfügbar
RGP30M-E3/73 RGP30M-E3/73 Hersteller : Vishay General Semiconductor - Diodes Division rgp30a.pdf Description: DIODE GEN PURP 1KV 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar