RJK03M7DPA-00#J5A Renesas Electronics America Inc

Description: MOSFET N-CH 30V 30A 8WPAK, Packaging: Bulk, Package / Case: 8-WFDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), Rds On (Max) @ Id, Vgs: 9.6mOhm @ 15A, 10V, Power Dissipation (Max): 25W (Tc), Supplier Device Package: 8-WPAK, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 10 V.