RJK03P9DPA-00#J5A

RJK03P9DPA-00#J5A Renesas Electronics America Inc


RNCCS17804-1.pdf?t.download=true&u=5oefqw Hersteller: Renesas Electronics America Inc
Description: POWER, N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 15W, 35W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A, 50A
Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Supplier Device Package: 8-WPAK
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Technische Details RJK03P9DPA-00#J5A Renesas Electronics America Inc

Description: POWER, N-CHANNEL MOSFET, Packaging: Bulk, Package / Case: 8-WFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 15W, 35W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 20A, 50A, Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 10V, Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V, FET Feature: Logic Level Gate, 4.5V Drive, Supplier Device Package: 8-WPAK.