RJK1001DPN-E0#T2 Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 40A, 10V
Power Dissipation (Max): 200W (Tc)
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 10 V
Description: MOSFET N-CH 100V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 40A, 10V
Power Dissipation (Max): 200W (Tc)
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 10 V
auf Bestellung 3363 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 78+ | 9.47 EUR |
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Technische Details RJK1001DPN-E0#T2 Renesas Electronics Corporation
Description: MOSFET N-CH 100V 80A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Ta), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 40A, 10V, Power Dissipation (Max): 200W (Tc), Supplier Device Package: TO-220AB, Part Status: Obsolete, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 10 V.