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RJP60F5DPK-01#T0

RJP60F5DPK-01#T0 Renesas Electronics Corporation

rjp60f5dpk-datasheet Hersteller: Renesas Electronics Corporation
Description: IGBT 600V 80A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 53ns/90ns
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 74 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 260.4 W
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Anzahl Preis ohne MwSt
3+8.89 EUR
10+ 7.47 EUR
100+ 6.04 EUR
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Technische Details RJP60F5DPK-01#T0 Renesas Electronics Corporation

Description: IGBT 600V 80A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A, Supplier Device Package: TO-3P, Td (on/off) @ 25°C: 53ns/90ns, Test Condition: 400V, 30A, 5Ohm, 15V, Gate Charge: 74 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 260.4 W.

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RJP60F5DPK-01#T0 Hersteller : Renesas Electronics r07ds0757ej0100_rjp60f5dpk-1093110.pdf IGBT Transistors IGBT
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