RJS6004WDPK-00#T0

RJS6004WDPK-00#T0 Renesas Electronics Corporation


rjs6004wdpk-data-sheet-600v-20a-diode-sic-schottky-barrier-diode?language=en Hersteller: Renesas Electronics Corporation
Description: DIODE ARR SIC SCHOTT 600V TO3P
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-3P
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 750 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+91.4 EUR
Mindestbestellmenge: 8
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Technische Details RJS6004WDPK-00#T0 Renesas Electronics Corporation

Description: DIODE ARR SIC SCHOTT 600V TO3P, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 15 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A (DC), Supplier Device Package: TO-3P, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.

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RJS6004WDPK-00#T0 RJS6004WDPK-00#T0 Hersteller : Renesas Electronics Corporation rjs6004wdpk-data-sheet-600v-20a-diode-sic-schottky-barrier-diode?language=en Description: DIODE ARR SIC SCHOTT 600V TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-3P
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
RJS6004WDPK-00#T0 Hersteller : Renesas Electronics r07ds0897ej0300_rjs6004wdp-1093138.pdf Diodes - General Purpose, Power, Switching SiC SBD - 600V/20A/10A, TO-3PSG pkg
Produkt ist nicht verfügbar