RJU60C2SDPD-E0#J2

RJU60C2SDPD-E0#J2 Renesas Electronics Corporation


rju60c2sdpd-datasheet Hersteller: Renesas Electronics Corporation
Description: DIODE GEN PURP 600V 5A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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Technische Details RJU60C2SDPD-E0#J2 Renesas Electronics Corporation

Description: DIODE GEN PURP 600V 5A TO252, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 70 ns, Technology: Standard, Current - Average Rectified (Io): 5A, Supplier Device Package: TO-252, Operating Temperature - Junction: 150°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A, Current - Reverse Leakage @ Vr: 1 µA @ 600 V.

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RJU60C2SDPD-E0#J2 RJU60C2SDPD-E0#J2 Hersteller : Renesas Electronics Corporation rju60c2sdpd-datasheet Description: DIODE GEN PURP 600V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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RJU60C2SDPD-E0#J2 Hersteller : Renesas Electronics r07ds0373ej_rju60c2sdp-1092904.pdf Diodes - General Purpose, Power, Switching Fast Recovery Diode 600V TO-252 IF=8A
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