RM10N30D2 Rectron USA
Hersteller: Rectron USADescription: MOSFET N-CH 30V 10A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details RM10N30D2 Rectron USA
Description: MOSFET N-CH 30V 10A 6PQFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V, Power Dissipation (Max): 730mW (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 6-PQFN (2x2), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V.